**GATE 2015 (Electron Devices)**

1. Which
one of the following processes is preferred to form the gate dielectric (SiO

_{2}) of MOSFET?
a. Sputtering

b. Molecular
Beam Epitaxy

c. Wet
Oxidation

d. Dry
Oxidation

**Solution :**https://www.youtube.com/watch?v=aT-PUfpeyOY

2. In the circuit shown, the BJT has a current gain (β) of 50. For an emitter base voltage V

_{EB}= 600 mV, the emitter collector voltage V

_{EC}(in volts) is_______________

**Solution :**https://www.youtube.com/watch?v=RoAi_j7vZpo

3. If
the base width in a bipolar junction transistor is doubled, which one of the following
statements will be TRUE?

a. Current
gain will increase

b. Unity
gain frequency will increase

c. Emitter
base junction capacitance will increase

d. Early
voltage will increase

**Solution :**https://www.youtube.com/watch?v=bdDtbyWDUeM

4. In the circuit shown, assume that the diodes D

_{1}and D

_{2}are ideal. The average value of voltage V

_{ab}(in volts), across terminals a and b is ________________

**Solution :**https://www.youtube.com/watch?v=nK21y4c_m0Q

5. The
electric field profile in the depletion region of a PN junction in equilibrium is
shown in the figure. Which one of the following is NOT TRUE?

a. The
left side of the junction is N-type and the right side is P-type

b. Both
the N-type and P-type depletion regions are uniformly doped

c. The
potential difference across the depletion region is 700 mV

d. If the
P-type region has a doping concentration of 10

^{15}cm^{-3}, then the doping concentration in the N-type region will be 10^{16}cm^{-3}^{ }**Solution :**https://www.youtube.com/watch?v=LNjwCHJv3UE

6. In the circuit shown, the both the enhancement mode NMOS transistors have the following characteristics: K

_{n}= µ

_{n}.C

_{ox}(W/L) = 1 mA/V

^{2}, V

_{TN}= 1 volt.

Assume that the channel length modulation parameter λ is zero and body is shorted to source. The minimum supply voltage VDD (in volts) needed to ensure that transistor M1 operates in saturation mode of operation is ___________________

**Solution :**https://www.youtube.com/watch?v=nAvaaApnnao

7.
The current in an enhancement mode NMOS transistor biased in saturation
mode was measured to be 1 mA at a drain to source voltage of 5 volts. When the
drain – source voltage was increased to 6 volts, while keeping gate-source voltage
same, the drain current increased to 1.02 mA. Assume that drain to source saturation
voltages is much smaller than the applied drain source voltage. The channel
length modulation parameter λ (in V

^{-1}) is __________**Solution :**https://www.youtube.com/watch?v=4AebD_Jv5C8
8.
An NPN BJT having reverse saturation current I

_{s}= 10^{-15}A is biased in the forward active region with V_{BE}=700 mV. The thermal voltage (V_{T}) is 25 mV and the current gain (β) may vary from 50 to 150 due to manufacturing variations. The maximum emitter current (in µA) is ____________________________**Solution :**https://www.youtube.com/watch?v=-Ff_pmSDNlQ
9. A
silicon sample is uniformly doped with donor type impurities with a
concentration of 10

^{16}cm^{-3}. The electron and hole mobilities in the sample are 1200 cm^{2}/V-sec and 400 cm^{2}/V-sec respectively. Assume complete ionization of impurities. The charge of an electron is 1.6x10^{-19}C. The resistivity of the sample (in Ω-cm) is _______________**Solution :**https://www.youtube.com/watch?v=Zo6ei-B4gX8
10. A region of negative differential
resistance is observed in the current voltage characteristics of a silicon PN
junction if

a. Both
the P-region and N-region are heavily doped

b. The N-region
is heavily doped compared to P-region

c. The
P-region is heavily doped compared to N-region

d. An intrinsic
silicon region is inserted between the P-region and the N-region

**Solution :**https://www.youtube.com/watch?v=AfBuhR7yT50

11. For the circuit shown, assume ideal diodes. The shape of the output (V

_{out}) for the given sine wave input (V

_{in}) will be ________________

**Solution :**https://www.youtube.com/watch?v=zvClgr7lhQE

12. In the circuit shown
below, the Zener diode is ideal and the Zener voltage is 6 volts. The output
voltage V

_{o}(in volts) is _______________**Solution :**https://www.youtube.com/watch?v=cUtPNGP5npk
13. For the NMOSFET in the
circuit shown, the threshold voltage is V

_{th}greater than zero. The source voltage V_{SS}is varied from 0 to V_{DD}. Neglecting the channel length modulation, the drain current I_{D}as a function of V_{SS}is represented by**Solution :**https://www.youtube.com/watch?v=qipvNgPQNDM
14. For a silicon diode
with ling P and N regions, the acceptor and donor impurity concentrations are
1x10

^{17}cm^{-3}and 1x10^{15}cm^{-3}respectively. The lifetimes of electron in P-region and holes in N-region are both 100 µs. The electron and hole diffusion coefficients are 49 cm^{2}/sec and 36 cm^{2}/sec respectively. Assume thermal voltage is 26 mV, the intrinsic carrier concentration is 1x10^{10}cm^{-3}and q = 1.6x10^{-19}C. When a forward voltage of 208 mV is applied across the diode, the hole current density (in nA/cm^{2}) injected from P-region to N-region is ___________**Solution :**https://www.youtube.com/watch?v=aR7Vz7Fm3co
15. A MOSFET in saturation
has a drain current of 1 mA for V

_{DS}= 0.5 volts. If the channel length modulation coefficient is 0.05 V^{-1}, the output resistance (in kΩ) of the MOSFET is ________**Solution :**https://www.youtube.com/watch?v=uFmH59NNz6s
16. The built in potential
of an abrupt PN junction is 0.75 volts. If its junction capacitance (C

_{J}) at a reverse bias (V_{R}) of 1.25 volts is 5 pF. The value of C_{J}(in pF) when V_{R}= 7.25 volts is _____**Solution :**https://www.youtube.com/watch?v=dk28aPHYdnY
17. A piece of silicon is
doped uniformly with phosphorous with a doping concentration of 10

^{16}per cm^{3}. The expected value of mobility verses doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is 1.6x10^{-19}C. The conductivity (in Simons/cm) of the silicon sample at 300^{o}K is _______________**Solution :**https://www.youtube.com/watch?v=6im7x-zbWH4
18. An N-type silicon
sample is uniformly illuminated with light which generates 10

^{20}electron-hole pairs per cm^{3}per second. The minority carrier lifetime in the sample is 1 µs. In the steady state, the hole concentration in the sample is approximately 10^{x}, where x is an integer. The value of x is _________________**Solution :**https://www.youtube.com/watch?v=Cd_4k0VGFXg
19. In MOS capacitor with
an oxide layer thickness of 10 nm. The maximum depletion layer thickness is 100
nm. The permittivity’s of the semiconductor and the oxide layer are ε

_{s}and ε_{ox}respectively. Assuming ε_{s}/ε_{ox}= 3, the ratio of the maximum capacitance to the minimum capacitance of this MOS capacitor is ____________**Solution :**https://www.youtube.com/watch?v=eIk6sCXiKbY
20. The energy band
diagram and the electron density profile n(x) in a semiconductor are shown in
the figures.

**Solution :**https://www.youtube.com/watch?v=oibHxv4SAs8
21. A DC voltage of 10
volts is applied across an N-type silicon bar having a rectangular cross section
and length of 1 cm as shown. The donor doping concentration N

_{D}and the mobility of electron µ_{n}are 10^{16}cm^{-3}and 1000 cm^{2}/V-sec respectively. The average time (in µs) taken by the electrons to move from one end of the bar to the other end is _______________**Solution :**https://www.youtube.com/watch?v=kOhp3iqtlSk_{ON}= 0.7 volts but is ideal otherwise. The current (in mA) in the 4 kΩ resistor is __________________

**Solution :**https://www.youtube.com/watch?v=pk_MWnHnVfo

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